IRG7PSH50UDPBF
- Manufacturer's Part No.:IRG7PSH50UDPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 116A 462W TO274
- Datasheet:
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- Available: 3835
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG7PSH50UDPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- IGBT TypeTrench
- Lead FreeLead Free
- PackagingTube
- Published2010
- Input TypeStandard
- Gate Charge440nC
- Part StatusObsolete
- Power - Max462W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time70 ns
- Mounting TypeThrough Hole
- Rise Time-Max60ns
- Number of Pins247
- Package / CaseTO-247-3
- Test Condition600V, 50A, 5 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN OVER NICKEL
- Switching Energy3.6mJ (on), 2.2mJ (off)
- Fall Time-Max (tf)65ns
- Number of Elements1
- Radiation HardeningNo
- Td (on/off) @ 25°C35ns/430ns
- Element ConfigurationSingle
- Max Collector Current116A
- Max Power Dissipation462W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time190 ns
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A
- Gate-Emitter Voltage-Max30V
- Turn Off Time-Nom (toff)650 ns
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)2V
- Current - Collector Pulsed (Icm)150A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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