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IRG7PSH54K10DPBF

  • In Stock: 3141
  • Available: 3141

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $25.51520US $25.52
10+US $19.13640US $191.36
30+US $16.58488US $497.55
100+US $14.67124US $1467.12
500+US $13.77821US $6889.11
1000+US $12.75760US $12757.60

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG7PSH54K10DPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Weight
    38.000013g
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    435nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Rise Time-Max
    105ns
  • Number of Pins
    247
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 50A, 5 Ω, 15V
  • Switching Energy
    4.8mJ (on), 2.8mJ (off)
  • Factory Lead Time
    19 Weeks
  • Fall Time-Max (tf)
    90ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    110ns/490ns
  • Element Configuration
    Single
  • Max Collector Current
    65A
  • Max Power Dissipation
    520W
  • Operating Temperature
    -40°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    170 ns
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 50A
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Current - Collector (Ic) (Max)
    120A
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Current - Collector Pulsed (Icm)
    200A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.4V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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