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IRGB15B60KDPBF

  • Available: 19282

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.04600US $4.05
10+US $3.64140US $36.41
30+US $2.83220US $84.97
100+US $2.32645US $232.64
500+US $2.22530US $1112.65
1000+US $2.02300US $2023.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGB15B60KDPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.69mm
  • Height
    15.24mm
  • Length
    10.54mm
  • Weight
    6.000006g
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    16ns
  • Input Type
    Standard
  • Gate Charge
    56nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • Turn On Time
    52 ns
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Current Rating
    31A
  • Number of Pins
    3
  • Package / Case
    TO-220-3
  • Test Condition
    400V, 15A, 22 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    220μJ (on), 340μJ (off)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    208W
  • Additional Feature
    ULTRA FAST
  • Number of Elements
    1
  • Turn On Delay Time
    34 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    34ns/184ns
  • Turn-Off Delay Time
    184 ns
  • Element Configuration
    Single
  • Max Collector Current
    31A
  • Max Power Dissipation
    139W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    92 ns
  • Number of Terminations
    3
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 15A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    231 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Collector Emitter Voltage (VCEO)
    2.2V
  • Current - Collector Pulsed (Icm)
    62A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.2V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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