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IRGP4063D-EPBF

  • Available: 2734

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGP4063D-EPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2006
  • Input Type
    Standard
  • Gate Charge
    140nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Rise Time-Max
    56ns
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 48A, 10 Ω, 15V
  • Base Part Number
    IRGP4063D
  • Switching Energy
    625μJ (on), 1.28mJ (off)
  • Power Dissipation
    330W
  • Fall Time-Max (tf)
    46ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    60ns/145ns
  • Element Configuration
    Single
  • Max Collector Current
    96A
  • Max Power Dissipation
    330W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    115 ns
  • Vce(on) (Max) @ Vge, Ic
    2.14V @ 15V, 48A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    2.14V
  • Current - Collector Pulsed (Icm)
    200A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.05V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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