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IRGP4066D-EPBF

  • In Stock: 160000
  • Available: 8217

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $36.00000US $36.00
10+US $27.00000US $270.00
30+US $23.40000US $702.00
100+US $20.70000US $2070.00
500+US $19.44000US $9720.00
1000+US $18.00000US $18000.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGP4066D-EPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.13mm
  • Height
    20.7mm
  • Length
    15.87mm
  • Weight
    6.500007g
  • IGBT Type
    Trench
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Input Type
    Standard
  • Gate Charge
    150nC
  • Part Status
    Active
  • Power - Max
    454W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    120 ns
  • JEDEC-95 Code
    TO-247AD
  • Mounting Type
    Through Hole
  • Rise Time-Max
    90ns
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 75A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Contact Plating
    Tin
  • Switching Energy
    2.47mJ (on), 2.16mJ (off)
  • Factory Lead Time
    26 Weeks
  • Fall Time-Max (tf)
    80ns
  • Number of Elements
    1
  • Turn On Delay Time
    50 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    50ns/200ns
  • Turn-Off Delay Time
    200 ns
  • Element Configuration
    Single
  • Max Collector Current
    140A
  • Max Power Dissipation
    454W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    155 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 75A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    310 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    2.1V
  • Current - Collector Pulsed (Icm)
    225A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.7V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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