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IRGP4069PBF

  • Available: 2540

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGP4069PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL
  • Package / Case
    TO-247-3
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~175°C TJ
  • Mount
    Through Hole
  • Number of Pins
    3
  • Packaging
    Tube
  • Subcategory
    Insulated Gate BIP Transistors
  • Number of Terminations
    3
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Published
    2004
  • Case Connection
    COLLECTOR
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • JEDEC-95 Code
    TO-247AC
  • Max Power Dissipation
    268W
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    POWER CONTROL
  • Collector Emitter Voltage (VCEO)
    1.85V
  • Max Collector Current
    76A
  • Collector Emitter Breakdown Voltage
    600V
  • Power Dissipation
    268W
  • Collector Emitter Saturation Voltage
    1.6V
  • Turn On Time
    78 ns
  • Turn On Delay Time
    43 ns
  • Turn-Off Delay Time
    127 ns
  • Fall Time-Max (tf)
    54ns
  • Rise Time-Max
    42ns
  • Input Type
    Standard
  • Test Condition
    400V, 35A, 10 Ω, 15V
  • IGBT Type
    Trench
  • Gate Charge
    104nC
  • Current - Collector Pulsed (Icm)
    105A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Switching Energy
    390μJ (on), 632μJ (off)
  • Turn Off Time-Nom (toff)
    188 ns
  • Td (on/off) @ 25°C
    46ns/105ns
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 35A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • REACH SVHC
    No SVHC

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  • Delivery Time

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