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IRGP4650DPBF

  • Available: 52

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $8.10526US $8.11
10+US $7.29473US $72.95
30+US $5.67368US $170.21
100+US $4.66052US $466.05
500+US $4.45789US $2228.95
1000+US $4.05263US $4052.63

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGP4650DPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.31mm
  • Height
    20.7mm
  • Length
    15.87mm
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Input Type
    Standard
  • Gate Charge
    104nC
  • Part Status
    Active
  • Power - Max
    268W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Rise Time-Max
    42ns
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 35A, 10 Ω, 15V
  • Switching Energy
    390μJ (on), 632μJ (off)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    134W
  • Fall Time-Max (tf)
    54ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    46ns/105ns
  • Element Configuration
    Single
  • Max Collector Current
    76A
  • Max Power Dissipation
    268W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    120 ns
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 35A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    1.9V
  • Current - Collector Pulsed (Icm)
    105A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.6V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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