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IRGP50B60PD1PBF

  • Available: 11973

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $24.08800US $24.09
10+US $18.06600US $180.66
30+US $15.65720US $469.72
100+US $13.85060US $1385.06
500+US $13.00752US $6503.76
1000+US $12.04400US $12044.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGP50B60PD1PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.3086mm
  • Height
    20.7mm
  • Length
    15.87mm
  • Weight
    38.000013g
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    10ns
  • Input Type
    Standard
  • Gate Charge
    205nC
  • Part Status
    Last Time Buy
  • Subcategory
    Insulated Gate BIP Transistors
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • Turn On Time
    39 ns
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Current Rating
    75A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    390V, 33A, 3.3 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    255μJ (on), 375μJ (off)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    390W
  • Additional Feature
    HIGH RELIABILITY, LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    20ns
  • Number of Elements
    1
  • Turn On Delay Time
    30 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    30ns/130ns
  • Turn-Off Delay Time
    130 ns
  • Element Configuration
    Single
  • Max Collector Current
    75A
  • Max Power Dissipation
    390W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    42 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.85V @ 15V, 50A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    161 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    5V
  • Collector Emitter Voltage (VCEO)
    2.85V
  • Current - Collector Pulsed (Icm)
    150A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.35V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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