IRGP50B60PDPBF
- Manufacturer's Part No.:IRGP50B60PDPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 75A 370W TO247AC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 100000
- Available: 10321
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.38000 | US $5.38 |
10+ | US $4.84200 | US $48.42 |
30+ | US $3.76600 | US $112.98 |
100+ | US $3.09350 | US $309.35 |
500+ | US $2.95900 | US $1479.50 |
1000+ | US $2.69000 | US $2690.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRGP50B60PDPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width5.3086mm
- Height24.99mm
- Length15.87mm
- Weight38.000013g
- IGBT TypeNPT
- Lead FreeLead Free
- PackagingBulk
- Published2004
- Rise Time26ns
- Input TypeStandard
- Gate Charge240nC
- Part StatusLast Time Buy
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time59 ns
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Current Rating75A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition390V, 33A, 3.3 Ω, 15V
- Case ConnectionCOLLECTOR
- Contact PlatingTin
- Switching Energy360μJ (on), 380μJ (off)
- Factory Lead Time14 Weeks
- Power Dissipation370W
- Additional FeatureHIGH RELIABILITY, LOW CONDUCTION LOSS
- Fall Time-Max (tf)65ns
- Number of Elements1
- Turn On Delay Time33 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C34ns/130ns
- Turn-Off Delay Time140 ns
- Element ConfigurationSingle
- Max Collector Current75A
- Max Power Dissipation370W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time50 ns
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 50A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)190 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current75A
- Gate-Emitter Thr Voltage-Max5V
- Max Junction Temperature (Tj)150°C
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)150A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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