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IRGPS60B120KDP

  • Available: 550

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $38.38000US $38.38
10+US $28.78500US $287.85
30+US $24.94700US $748.41
100+US $22.06850US $2206.85
500+US $20.72520US $10362.60
1000+US $19.19000US $19190.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGPS60B120KDP
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.5mm
  • Height
    25.05mm
  • Length
    16.1mm
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    32ns
  • Input Type
    Standard
  • Gate Charge
    340nC
  • Part Status
    Last Time Buy
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    104 ns
  • Mounting Type
    Through Hole
  • Current Rating
    105A
  • Number of Pins
    3
  • Package / Case
    TO-274AA
  • Test Condition
    600V, 15A, 4.7 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    3.21mJ (on), 4.78mJ (off)
  • Factory Lead Time
    13 Weeks
  • Power Dissipation
    595W
  • Fall Time-Max (tf)
    58ns
  • Number of Elements
    1
  • Turn On Delay Time
    72 ns
  • Voltage - Rated DC
    1.2kV
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    366 ns
  • Element Configuration
    Single
  • Max Collector Current
    105A
  • Max Power Dissipation
    595W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    180 ns
  • Number of Terminations
    3
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.75V @ 15V, 60A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    411 ns
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    105A
  • Gate-Emitter Thr Voltage-Max
    6V
  • Max Junction Temperature (Tj)
    150°C
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    240A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.5V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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