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IRGS4610DPBF

  • Available: 8775

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGS4610DPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Part Status
    Obsolete
  • Operating Temperature
    -40°C~175°C TJ
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Tube
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Peak Reflow Temperature (Cel)
    260
  • Published
    2001
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Weight
    260.39037mg
  • Max Power Dissipation
    77W
  • Power - Max
    77W
  • Mounting Type
    Surface Mount
  • Element Configuration
    Single
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    16A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.7V
  • Input Type
    Standard
  • Reverse Recovery Time
    74 ns
  • Test Condition
    400V, 6A, 47 Ω, 15V
  • Gate Charge
    13nC
  • Current - Collector Pulsed (Icm)
    18A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Switching Energy
    56μJ (on), 122μJ (off)
  • Td (on/off) @ 25°C
    27ns/75ns
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

SHIPPING GUIDE

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  • Delivery Time

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