IRGS6B60KDPBF
- Manufacturer's Part No.:IRGS6B60KDPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 13A 90W D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 49452
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.07280 | US $4.07 |
10+ | US $3.66552 | US $36.66 |
30+ | US $2.85096 | US $85.53 |
100+ | US $2.34186 | US $234.19 |
500+ | US $2.24004 | US $1120.02 |
1000+ | US $2.03640 | US $2036.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRGS6B60KDPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.699mm
- Length10.668mm
- IGBT TypeNPT
- Lead FreeLead Free
- PackagingTube
- Published2012
- Rise Time17ns
- Input TypeStandard
- Gate Charge18.2nC
- Part StatusLast Time Buy
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time45 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating13A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition400V, 5A, 100 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Base Part NumberIRGS6B60KDPBF
- Switching Energy110μJ (on), 135μJ (off)
- Factory Lead Time13 Weeks
- Power Dissipation90W
- Fall Time-Max (tf)27ns
- Number of Elements1
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C25ns/215ns
- Element ConfigurationSingle
- Max Collector Current13A
- Max Power Dissipation90W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time70 ns
- Number of Terminations2
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 5A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)258 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5.5V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)2.2V
- Current - Collector Pulsed (Icm)26A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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