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IRGSL4B60KD1PBF

  • Available: 2188

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.72960US $3.73
10+US $3.35664US $33.57
30+US $2.61072US $78.32
100+US $2.14452US $214.45
500+US $2.05128US $1025.64
1000+US $1.86480US $1864.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRGSL4B60KD1PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.826mm
  • Height
    9.652mm
  • Length
    10.668mm
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    18ns
  • Input Type
    Standard
  • Gate Charge
    12nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    40 ns
  • Mounting Type
    Through Hole
  • Current Rating
    11A
  • Number of Pins
    3
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Test Condition
    400V, 4A, 100 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Switching Energy
    73μJ (on), 47μJ (off)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    63W
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Fall Time-Max (tf)
    89ns
  • Number of Elements
    1
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    22ns/100ns
  • Element Configuration
    Single
  • Max Collector Current
    11A
  • Max Power Dissipation
    63W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    93 ns
  • Number of Terminations
    3
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 4A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    199 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    2.5V
  • Current - Collector Pulsed (Icm)
    22A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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