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IRL1404STRLPBF
- Manufacturer's Part No.:IRL1404STRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 40V 160A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 59699
- Available: 59699
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.38668 | US $3.39 |
10+ | US $3.04801 | US $30.48 |
30+ | US $2.37068 | US $71.12 |
100+ | US $1.94734 | US $194.73 |
500+ | US $1.86267 | US $931.34 |
1000+ | US $1.69334 | US $1693.34 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRL1404STRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount, Through Hole
- Width4.826mm
- Height4.703mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2002
- Rise Time270ns
- Vgs (Max)±20V
- Resistance4mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs3 V
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating160A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)130 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation3.8W
- Threshold Voltage3V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC40V
- Dual Supply Voltage40V
- Radiation HardeningNo
- Turn-Off Delay Time38 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 200W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs4m Ω @ 95A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs140nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)520 mJ
- Continuous Drain Current (ID)160A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)640A
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds6600pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.3V 10V
- Current - Continuous Drain (Id) @ 25°C160A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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