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IRL2203NSTRLPBF
- Manufacturer's Part No.:IRL2203NSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 116A D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 6200
- Available: 800
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $6.11600 | US $6.12 |
| 10+ | US $5.50440 | US $55.04 |
| 30+ | US $4.28120 | US $128.44 |
| 100+ | US $3.51670 | US $351.67 |
| 500+ | US $3.36380 | US $1681.90 |
| 1000+ | US $3.05800 | US $3058.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRL2203NSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.572mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2010
- Rise Time160ns
- Vgs (Max)±16V
- Resistance7MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs3 V
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time84 ns
- Terminal FormGULL WING
- Current Rating116A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)66 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation170W
- Threshold Voltage3V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Dual Supply Voltage30V
- Radiation HardeningNo
- Turn-Off Delay Time23 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 180W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs7m Ω @ 60A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)75A
- Gate Charge (Qg) (Max) @ Vgs60nC @ 4.5V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)290 mJ
- Continuous Drain Current (ID)116A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds3290pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C116A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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