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IRL2203NSTRLPBF

  • In Stock: 6200
  • Available: 800

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $6.11600US $6.12
10+US $5.50440US $55.04
30+US $4.28120US $128.44
100+US $3.51670US $351.67
500+US $3.36380US $1681.90
1000+US $3.05800US $3058.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRL2203NSTRLPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.65mm
  • Height
    4.572mm
  • Length
    10.668mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Rise Time
    160ns
  • Vgs (Max)
    ±16V
  • Resistance
    7MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    3 V
  • Part Status
    Not For New Designs
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    84 ns
  • Terminal Form
    GULL WING
  • Current Rating
    116A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    66 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    170W
  • Threshold Voltage
    3V
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Voltage - Rated DC
    30V
  • Dual Supply Voltage
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    23 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    3.8W Ta 180W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 60A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    75A
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    16V
  • Avalanche Energy Rating (Eas)
    290 mJ
  • Continuous Drain Current (ID)
    116A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    400A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    3290pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    116A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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