IRL3705NS
- Manufacturer's Part No.:IRL3705NS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 89A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3763
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRL3705NS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- FET TypeN-Channel
- HTS Code8541.29.00.95
- PackagingTube
- Published1998
- Vgs (Max)±16V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 250μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 170W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs10m Ω @ 46A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min55V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)89A
- Gate Charge (Qg) (Max) @ Vgs98nC @ 5V
- Avalanche Energy Rating (Eas)340 mJ
- Peak Reflow Temperature (Cel)225
- Drain to Source Voltage (Vdss)55V
- Drain-source On Resistance-Max0.012Ohm
- Pulsed Drain Current-Max (IDM)310A
- Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Current - Continuous Drain (Id) @ 25°C89A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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