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IRL520NSTRLPBF
- Manufacturer's Part No.:IRL520NSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 10A D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 11869
- Available: 170097
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.51800 | US $1.52 |
10+ | US $1.01200 | US $10.12 |
30+ | US $0.75900 | US $22.77 |
100+ | US $0.60720 | US $60.72 |
500+ | US $0.55660 | US $278.30 |
1000+ | US $0.50600 | US $506.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRL520NSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.826mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time35ns
- Vgs (Max)±16V
- Resistance180MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- TerminationSMD/SMT
- Mounting TypeSurface Mount
- Recovery Time160 ns
- Terminal FormGULL WING
- Current Rating10A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)22 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation3.8W
- Threshold Voltage2V
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time4 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time23 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 48W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs180m Ω @ 6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)85 mJ
- Continuous Drain Current (ID)10A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Current - Continuous Drain (Id) @ 25°C10A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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