IRL6372TRPBF
- Manufacturer's Part No.:IRL6372TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET 2N-CH 30V 8.1A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 243454
- Available: 239454
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $28.40000 | US $28.40 |
10+ | US $21.30000 | US $213.00 |
30+ | US $18.46000 | US $553.80 |
100+ | US $16.33000 | US $1633.00 |
500+ | US $15.33600 | US $7668.00 |
1000+ | US $14.20000 | US $14200.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRL6372TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2011
- Rise Time13ns
- Resistance17.9MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs1.1 V
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)15 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberIRL6372PBF
- Factory Lead Time15 Weeks
- Power Dissipation2W
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Turn On Delay Time5.9 ns
- Vgs(th) (Max) @ Id1.1V @ 10μA
- Radiation HardeningNo
- Turn-Off Delay Time34 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs17.9m Ω @ 8.1A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)8.1A
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)65A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds1020pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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