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IRLIZ44NPBF

  • In Stock: 4000
  • Available: 56337

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.16000US $2.16
10+US $1.44000US $14.40
30+US $1.08000US $32.40
100+US $0.86400US $86.40
500+US $0.79200US $396.00
1000+US $0.72000US $720.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRLIZ44NPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.826mm
  • Height
    9.8mm
  • Length
    10.6172mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tube
  • Published
    2004
  • Rise Time
    84ns
  • Vgs (Max)
    ±16V
  • Resistance
    25mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    2 V
  • Part Status
    Not For New Designs
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    120 ns
  • Current Rating
    30A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3 Full Pack
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    15 ns
  • Factory Lead Time
    14 Weeks
  • Isolation Voltage
    2kV
  • Power Dissipation
    38W
  • Threshold Voltage
    2V
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Voltage - Rated DC
    55V
  • Dual Supply Voltage
    55V
  • Turn-Off Delay Time
    26 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    45W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 17A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    28A
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 5V
  • Gate to Source Voltage (Vgs)
    16V
  • Continuous Drain Current (ID)
    30A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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