IRLIZ44NPBF
- Manufacturer's Part No.:IRLIZ44NPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 30A TO220FP
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 4000
- Available: 56337
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.16000 | US $2.16 |
10+ | US $1.44000 | US $14.40 |
30+ | US $1.08000 | US $32.40 |
100+ | US $0.86400 | US $86.40 |
500+ | US $0.79200 | US $396.00 |
1000+ | US $0.72000 | US $720.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLIZ44NPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.8mm
- Length10.6172mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTube
- Published2004
- Rise Time84ns
- Vgs (Max)±16V
- Resistance25mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time120 ns
- Current Rating30A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3 Full Pack
- Case ConnectionISOLATED
- Fall Time (Typ)15 ns
- Factory Lead Time14 Weeks
- Isolation Voltage2kV
- Power Dissipation38W
- Threshold Voltage2V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC55V
- Dual Supply Voltage55V
- Turn-Off Delay Time26 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max45W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs22m Ω @ 17A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)28A
- Gate Charge (Qg) (Max) @ Vgs48nC @ 5V
- Gate to Source Voltage (Vgs)16V
- Continuous Drain Current (ID)30A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Current - Continuous Drain (Id) @ 25°C30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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