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IRLL024NTRPBF

  • In Stock: 40000
  • Available: 240884

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.56430US $0.56
10+US $0.37620US $3.76
30+US $0.28215US $8.46
100+US $0.22572US $22.57
500+US $0.20691US $103.46
1000+US $0.18810US $188.10

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRLL024NTRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.7mm
  • Height
    1.8mm
  • Length
    6.6802mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    1999
  • Rise Time
    21ns
  • Vgs (Max)
    ±16V
  • Resistance
    65mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    2 V
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Recovery Time
    58 ns
  • Terminal Form
    GULL WING
  • Current Rating
    3.1A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-261-4, TO-261AA
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    25 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2.1W
  • Terminal Position
    DUAL
  • Threshold Voltage
    2V
  • Additional Feature
    AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    7.4 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Voltage - Rated DC
    55V
  • Dual Supply Voltage
    55V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    18 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1W Ta
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    65m Ω @ 3.1A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    15.6nC @ 5V
  • Gate to Source Voltage (Vgs)
    16V
  • Continuous Drain Current (ID)
    3.1A
  • Max Junction Temperature (Tj)
    150°C
  • Manufacturer Package Identifier
    IRLL024NTRPBF
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    510pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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