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IRLML2502TRPBF

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    IRLML2502TRPBF
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  • Description:
    SOT23-3 MOSFET RoHS
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  • In Stock: 60000
  • Available: 3149
  • Updated: 6 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.12852US $0.13
10+US $0.08568US $0.86
30+US $0.06426US $1.93
100+US $0.05141US $5.14
500+US $0.04712US $23.56
1000+US $0.04284US $42.84

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  • Description
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Description

The IRLML2502TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by VBsemi Electronics. This component is designed for use in various electronic applications, including power management, switching, and amplification.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The device typically comes in a compact SOT-23 package, which is a surface-mount technology (SMT) package that allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: The IRLML2502TRPBF has a maximum drain-source voltage (V_DS) rating of around 20V, making it suitable for low-voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 3.5A, which allows it to drive moderate loads effectively.
  5. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which contributes to higher efficiency and lower heat generation during operation.
  6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically in the range of 1V to 2V, allowing for easy drive with low-voltage logic levels.
  7. Switching Speed: The IRLML2502TRPBF is designed for fast switching applications, making it suitable for high-frequency operations.
  8. Thermal Characteristics: The device has a thermal resistance that allows it to operate efficiently without overheating, provided it is used within its specified limits.

Applications:

  • Power Management: Ideal for DC-DC converters, battery management systems, and power distribution.
  • Switching Applications: Can be used in relay drivers, motor controllers, and other switching circuits.
  • Signal Amplification: Suitable for low-power amplification in audio and RF applications.

Electrical Characteristics:

  • Input Capacitance (C_iss): Typically around 1000 pF, which affects the speed of the device when switching.
  • Output Capacitance (C_oss): Generally around 100 pF, influencing the performance in high-frequency applications.
  • Reverse Transfer Capacitance (C_rss): This is usually low, which helps in reducing switching losses.

Conclusion:

The IRLML2502TRPBF from VBsemi Electronics is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for modern electronic designs where space and efficiency are critical.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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