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IRLR120NTRPBF
- Manufacturer's Part No.:IRLR120NTRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 10A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 30000
- Available: 209932
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $0.51150 | US $0.51 |
| 10+ | US $0.34100 | US $3.41 |
| 30+ | US $0.25575 | US $7.67 |
| 100+ | US $0.20460 | US $20.46 |
| 500+ | US $0.18755 | US $93.77 |
| 1000+ | US $0.17050 | US $170.50 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLR120NTRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.52mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time35ns
- Vgs (Max)±16V
- Resistance185mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Recovery Time160 ns
- Terminal FormGULL WING
- Current Rating11A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)22 ns
- Factory Lead Time12 Weeks
- Power Dissipation48W
- Threshold Voltage2V
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time4 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time23 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max48W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs185m Ω @ 6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)85 mJ
- Continuous Drain Current (ID)10A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Current - Continuous Drain (Id) @ 25°C10A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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