Image is for your reference only, please check specifications for details
iconCompare
icon

IRLR2905TRPBF

  • In Stock: 3500
  • Available: 149621

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.74400US $0.74
10+US $0.49600US $4.96
30+US $0.37200US $11.16
100+US $0.29760US $29.76
500+US $0.27280US $136.40
1000+US $0.24800US $248.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRLR2905TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.22mm
  • Height
    2.52mm
  • Length
    6.7056mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • Rise Time
    84ns
  • Vgs (Max)
    ±16V
  • Resistance
    27mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    2 V
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Recovery Time
    120 ns
  • Terminal Form
    GULL WING
  • Current Rating
    41A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    15 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    69W
  • Threshold Voltage
    2V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Voltage - Rated DC
    55V
  • Dual Supply Voltage
    55V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    26 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    110W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 25A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    20A
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 5V
  • Gate to Source Voltage (Vgs)
    16V
  • Continuous Drain Current (ID)
    42A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance