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IRLR8743PBF
- Manufacturer's Part No.:IRLR8743PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 160A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 3789
- Available: 3789
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.84140 | US $1.84 |
10+ | US $1.22760 | US $12.28 |
30+ | US $0.92070 | US $27.62 |
100+ | US $0.73656 | US $73.66 |
500+ | US $0.67518 | US $337.59 |
1000+ | US $0.61380 | US $613.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLR8743PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2007
- Rise Time35ns
- Vgs (Max)±20V
- Resistance3.1MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.9 V
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)17 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time26 Weeks
- Power Dissipation135W
- Threshold Voltage1.9V
- Number of Elements1
- Turn On Delay Time19 ns
- Vgs(th) (Max) @ Id2.35V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time21 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max135W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs3.1m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs59nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)250 mJ
- Continuous Drain Current (ID)160A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)640A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds4880pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C160A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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