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IRLU3110ZPBF

  • In Stock: 300000
  • Available: 50279

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.44500US $2.45
10+US $1.63000US $16.30
30+US $1.22250US $36.68
100+US $0.97800US $97.80
500+US $0.89650US $448.25
1000+US $0.81500US $815.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRLU3110ZPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    2.3mm
  • Height
    6.1mm
  • Length
    6.6mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2006
  • Rise Time
    110ns
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    2.5 V
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    48 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    140W
  • Threshold Voltage
    2.5V
  • Number of Elements
    1
  • Turn On Delay Time
    24 ns
  • Vgs(th) (Max) @ Id
    2.5V @ 100μA
  • Dual Supply Voltage
    100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    33 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    140W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 38A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    16V
  • Continuous Drain Current (ID)
    42A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    250A
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    3980pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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