IRLU3110ZPBF
- Manufacturer's Part No.:IRLU3110ZPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 42A IPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 300000
- Available: 50279
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.44500 | US $2.45 |
10+ | US $1.63000 | US $16.30 |
30+ | US $1.22250 | US $36.68 |
100+ | US $0.97800 | US $97.80 |
500+ | US $0.89650 | US $448.25 |
1000+ | US $0.81500 | US $815.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLU3110ZPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.3mm
- Height6.1mm
- Length6.6mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2006
- Rise Time110ns
- Vgs (Max)±16V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2.5 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Case ConnectionDRAIN
- Fall Time (Typ)48 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation140W
- Threshold Voltage2.5V
- Number of Elements1
- Turn On Delay Time24 ns
- Vgs(th) (Max) @ Id2.5V @ 100μA
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time33 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max140W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs14m Ω @ 38A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs48nC @ 4.5V
- Gate to Source Voltage (Vgs)16V
- Continuous Drain Current (ID)42A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)250A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds3980pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C42A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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