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IRLU3410PBF
- Manufacturer's Part No.:IRLU3410PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 17A I-PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 84252
- Available: 5345
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.31274 | US $1.31 |
10+ | US $0.87516 | US $8.75 |
30+ | US $0.65637 | US $19.69 |
100+ | US $0.52510 | US $52.51 |
500+ | US $0.48134 | US $240.67 |
1000+ | US $0.43758 | US $437.58 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLU3410PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.3876mm
- Height6.22mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time53ns
- Vgs (Max)±16V
- Resistance105mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Current Rating17A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Case ConnectionDRAIN
- Fall Time (Typ)26 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation52W
- Terminal PositionSINGLE
- Threshold Voltage2V
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time7.2 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max79W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs105m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs34nC @ 5V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)150 mJ
- Continuous Drain Current (ID)17A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)60A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Current - Continuous Drain (Id) @ 25°C17A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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