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IRLU4343

  • Available: 3717

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRLU4343
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Published
    2004
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Through Hole
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Additional Feature
    HIGH RELIABILITY
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    79W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 4.7A, 10V
  • Transistor Application
    AMPLIFIER
  • DS Breakdown Voltage-Min
    55V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    26A
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Avalanche Energy Rating (Eas)
    160 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    55V
  • Drain-source On Resistance-Max
    0.05Ohm
  • Pulsed Drain Current-Max (IDM)
    80A
  • Input Capacitance (Ciss) (Max) @ Vds
    740pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    26A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PSSO-G3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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