IRLU8203PBF
- Manufacturer's Part No.:IRLU8203PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 110A I-PAK
- Datasheet:
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- Available: 3761
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLU8203PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2002
- Rise Time99ns
- Vgs (Max)±20V
- Rds On Max6.8 mΩ
- Resistance6.8mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs3 V
- Part StatusObsolete
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating110A
- Number of Pins4
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ)69 ns
- Input Capacitance2.43nF
- Power Dissipation140W
- Threshold Voltage3V
- Number of Elements1
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Dual Supply Voltage30V
- Turn-Off Delay Time30 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max140W Tc
- Rds On (Max) @ Id, Vgs6.8mOhm @ 15A, 10V
- Supplier Device PackageI-PAK
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Drain to Source Resistance9mOhm
- Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)110A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds2430pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C110A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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