IRLZ24NSTRLPBF
- Manufacturer's Part No.:IRLZ24NSTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 18A D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 800
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.10357 | US $2.10 |
10+ | US $1.40238 | US $14.02 |
30+ | US $1.05178 | US $31.55 |
100+ | US $0.84143 | US $84.14 |
500+ | US $0.77131 | US $385.66 |
1000+ | US $0.70119 | US $701.19 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRLZ24NSTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.699mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published1996
- Rise Time74ns
- Vgs (Max)±16V
- Resistance60mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Recovery Time90 ns
- Terminal FormGULL WING
- Current Rating17A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)29 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation45W
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time7.1 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Voltage - Rated DC55V
- Dual Supply Voltage55V
- Radiation HardeningNo
- Turn-Off Delay Time20 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 45W Tc
- Reverse Recovery Time60 ns
- Number of Terminations2
- Rds On (Max) @ Id, Vgs60m Ω @ 11A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)68 mJ
- Continuous Drain Current (ID)18A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)72A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds480pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Current - Continuous Drain (Id) @ 25°C18A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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