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ITC1100

  • Available: 12

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $810.02544US $810.03
10+US $723.23700US $7232.37
30+US $665.37804US $19961.34
100+US $613.30498US $61330.50
500+US $607.51908US $303759.54
1000+US $578.58960US $578589.60

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    ITC1100
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Gain
    10dB ~ 10.5dB
  • Mount
    Chassis Mount, Screw
  • Packaging
    Bulk
  • Pin Count
    3
  • Published
    2000
  • Part Status
    Obsolete
  • Pbfree Code
    no
  • Power - Max
    3400W
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    FLAT
  • Number of Pins
    3
  • Package / Case
    55SW
  • Terminal Finish
    TIN LEAD
  • Transistor Type
    NPN
  • Factory Lead Time
    22 Weeks
  • Power Dissipation
    3.4kW
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Max Collector Current
    80A
  • Max Power Dissipation
    3.4kW
  • Operating Temperature
    200°C TJ
  • Polarity/Channel Type
    NPN
  • Frequency - Transition
    1.03GHz
  • Highest Frequency Band
    L B
  • Number of Terminations
    3
  • Emitter Base Voltage (VEBO)
    3.5V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    65V
  • Collector Emitter Voltage (VCEO)
    30V
  • Collector Emitter Breakdown Voltage
    65V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 5A 5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0075
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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