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IXFN32N60

  • In Stock: 2866
  • Available: 2866

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $68.49200US $68.49
10+US $51.36900US $513.69
30+US $44.51980US $1335.59
100+US $39.38290US $3938.29
500+US $36.98568US $18492.84
1000+US $34.24600US $34246.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    IXYS
  • Manufacturer's Part No.
    IXFN32N60
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HiPerFET™
  • ECCN
    EAR99
  • Mount
    Chassis Mount
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Pin Count
    4
  • Published
    1996
  • Rise Time
    45ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-227-4, miniBLOC
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    60 ns
  • Terminal Finish
    Nickel (Ni)
  • Power Dissipation
    520W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    4.5V @ 8mA
  • Turn-Off Delay Time
    100 ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    520AW Tc
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    250m Ω @ 500mA, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    325nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    32A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.25Ohm
  • Pulsed Drain Current-Max (IDM)
    128A
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance (Ciss) (Max) @ Vds
    9000pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    32A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PUFM-X4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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