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IXFN38N100Q2

  • In Stock: 397
  • Available: 6918

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $48.96000US $48.96
10+US $36.72000US $367.20
30+US $31.82400US $954.72
100+US $28.15200US $2815.20
500+US $26.43840US $13219.20
1000+US $24.48000US $24480.00

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Product Parameter

  • Manufacturer
    IXYS
  • Manufacturer's Part No.
    IXFN38N100Q2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HiPerFET™
  • ECCN
    EAR99
  • Mount
    Chassis Mount
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    4
  • Published
    2003
  • Rise Time
    28ns
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-227-4, miniBLOC
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    15 ns
  • Terminal Finish
    Nickel (Ni)
  • Factory Lead Time
    8 Weeks
  • Power Dissipation
    890W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    5V @ 8mA
  • Turn-Off Delay Time
    57 ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    890W Tc
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    250m Ω @ 19A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    250nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    5000 mJ
  • Continuous Drain Current (ID)
    38A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    1000V
  • Drain-source On Resistance-Max
    0.25Ohm
  • Pulsed Drain Current-Max (IDM)
    152A
  • Drain to Source Breakdown Voltage
    1kV
  • Input Capacitance (Ciss) (Max) @ Vds
    7200pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    38A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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