IXFN48N50
- Manufacturer's Part No.:IXFN48N50
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFET™
- Description:N-Channel 500V 48A(Tc) 4V @ 8mA 100mΩ @ 24A,10V 520W(Tc) SOT-227 MOSFET RoHS
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 300
- Available: 6
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $183.60000 | US $183.60 |
10+ | US $159.12000 | US $1591.20 |
30+ | US $144.43200 | US $4332.96 |
100+ | US $132.19200 | US $13219.20 |
500+ | US $128.52000 | US $64260.00 |
1000+ | US $122.40000 | US $122400.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXFN48N50
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHiPerFET™
- ECCNEAR99
- MountChassis Mount, Screw
- FET TypeN-Channel
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published2002
- Rise Time60ns
- Vgs (Max)±20V
- Resistance100mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusNot For New Designs
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- Current Rating48A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-227-4, miniBLOC
- Case ConnectionDRAIN
- Fall Time (Typ)30 ns
- Terminal FinishNickel (Ni)
- Factory Lead Time8 Weeks
- Power Dissipation520W
- Terminal PositionUPPER
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 8mA
- Voltage - Rated DC500V
- Dual Supply Voltage500V
- Turn-Off Delay Time100 ns
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max520W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs100m Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)48A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)192A
- Drain to Source Breakdown Voltage500V
- Input Capacitance (Ciss) (Max) @ Vds8400pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C48A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PUFM-X4
- Moisture Sensitivity Level (MSL)Not Applicable
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