IXFT20N100P
- Manufacturer's Part No.:IXFT20N100P
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFET™, PolarP2™
- Description:MOSFET N-CH 1000V 20A TO-268
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 24
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $21.21734 | US $21.22 |
10+ | US $15.91301 | US $159.13 |
30+ | US $13.79127 | US $413.74 |
100+ | US $12.19997 | US $1220.00 |
500+ | US $11.45736 | US $5728.68 |
1000+ | US $10.60867 | US $10608.67 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXFT20N100P
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHiPerFET™, PolarP2™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published2007
- Rise Time37ns
- Vgs (Max)±30V
- Resistance570MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Case ConnectionDRAIN
- Fall Time (Typ)45 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time26 Weeks
- Power Dissipation660W
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id6.5V @ 1mA
- Turn-Off Delay Time56 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max660W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs570m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs126nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)800 mJ
- Continuous Drain Current (ID)20A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)1000V
- Pulsed Drain Current-Max (IDM)50A
- Drain to Source Breakdown Voltage1kV
- Input Capacitance (Ciss) (Max) @ Vds7300pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C20A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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