IXFT30N60P
- Manufacturer's Part No.:IXFT30N60P
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFET™, PolarHT™
- Description:MOSFET N-CH 600V 30A TO-268 D3
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 24
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $14.52200 | US $14.52 |
10+ | US $13.06980 | US $130.70 |
30+ | US $10.16540 | US $304.96 |
100+ | US $8.35015 | US $835.01 |
500+ | US $7.98710 | US $3993.55 |
1000+ | US $7.26100 | US $7261.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXFT30N60P
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHiPerFET™, PolarHT™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published2006
- Rise Time20ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating30A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Case ConnectionDRAIN
- Fall Time (Typ)25 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time24 Weeks
- Power Dissipation500W
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id5V @ 4mA
- Voltage - Rated DC600V
- Turn-Off Delay Time80 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max500W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs240m Ω @ 15A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)1500 mJ
- Continuous Drain Current (ID)30A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.24Ohm
- Pulsed Drain Current-Max (IDM)80A
- Drain to Source Breakdown Voltage600V
- Input Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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