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IXGH25N100
- Manufacturer's Part No.:IXGH25N100
- Manufacturer:
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- Series:-
- Description:IGBT 1000V 50A 200W TO247AD
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- In Stock: 4056
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- Available: 4056
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXGH25N100
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- PackagingTube
- Pin Count3
- Published1997
- Input TypeStandard
- Gate Charge130nC
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max200W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time350 ns
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247AD
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Test Condition800V, 25A, 33 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Base Part NumberIXG*25N100
- Switching Energy5mJ (off)
- Terminal PositionSINGLE
- Number of Elements1
- Td (on/off) @ 25°C100ns/500ns
- Qualification StatusNot Qualified
- Max Collector Current50A
- Max Power Dissipation200W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 25A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)1670 ns
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Emitter Voltage (VCEO)3.5V
- Current - Collector Pulsed (Icm)100A
- Collector Emitter Breakdown Voltage1kV
- Voltage - Collector Emitter Breakdown (Max)1000V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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