IXGH32N60AU1
- Manufacturer's Part No.:IXGH32N60AU1
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFAST™
- Description:IGBT 600V 60A 200W TO247AD
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 4062
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXGH32N60AU1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesHiPerFAST™
- ECCNEAR99
- MountThrough Hole
- Lead FreeLead Free
- PackagingBulk
- Pin Count3
- Published1996
- Input TypeStandard
- Gate Charge125nC
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time60 ns
- JEDEC-95 CodeTO-247AD
- Mounting TypeThrough Hole
- Current Rating60A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition480V, 32A, 4.7 Ω, 15V
- Case ConnectionCOLLECTOR
- Base Part NumberIXG*32N60
- Switching Energy1.8mJ (off)
- Fall Time-Max (tf)175ns
- Number of Elements1
- Voltage - Rated DC600V
- Td (on/off) @ 25°C25ns/120ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Max Collector Current60A
- Max Power Dissipation200W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time50ns
- Number of Terminations3
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 32A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)400 ns
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Emitter Voltage (VCEO)2.9V
- Current - Collector Pulsed (Icm)120A
- Collector Emitter Breakdown Voltage600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)Not Applicable
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