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IXGN50N60BD3

  • In Stock: 100
  • Available: 3538

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $70.00000US $70.00
10+US $52.50000US $525.00
30+US $45.50000US $1365.00
100+US $40.25000US $4025.00
500+US $37.80000US $18900.00
1000+US $35.00000US $35000.00

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Product Parameter

  • Manufacturer
    IXYS
  • Manufacturer's Part No.
    IXGN50N60BD3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    HiPerFAST™
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Chassis Mount, Screw
  • Weight
    38.000013g
  • Pin Count
    4
  • Published
    2000
  • VCEsat-Max
    2.5 V
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    250W
  • Subcategory
    Insulated Gate BIP Transistors
  • Turn On Time
    50 ns
  • Configuration
    Single
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    No
  • Number of Pins
    4
  • Package / Case
    SOT-227-4, miniBLOC
  • Case Connection
    ISOLATED
  • Terminal Finish
    Nickel (Ni)
  • Base Part Number
    IXG*50N60
  • Factory Lead Time
    8 Weeks
  • Input Capacitance
    4.1nF
  • Terminal Position
    UPPER
  • Number of Elements
    1
  • Max Collector Current
    75A
  • Max Power Dissipation
    250W
  • Operating Temperature
    -40°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    4
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 50A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    200 ns
  • Transistor Element Material
    SILICON
  • Input Capacitance (Cies) @ Vce
    4.1nF @ 25V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Cutoff (Max)
    200μA
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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