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IXGP15N120C
- Manufacturer's Part No.:IXGP15N120C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Lightspeed™
- Description:IGBT 1200V 30A 200W TO220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3785
- Price: please call
- Available: 3785
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXGP15N120C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesLightspeed™
- ECCNEAR99
- MountThrough Hole
- PackagingTube
- Pin Count3
- Published2004
- Input TypeStandard
- Gate Charge86nC
- Part StatusObsolete
- Pbfree Codeno
- Power - Max200W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time43 ns
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Test Condition960V, 15A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- Base Part NumberIXG*15N120
- Switching Energy1.05mJ (off)
- Terminal PositionSINGLE
- Fall Time-Max (tf)190ns
- Number of Elements1
- Td (on/off) @ 25°C25ns/150ns
- Qualification StatusNot Qualified
- Max Collector Current30A
- Max Power Dissipation200W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 15A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)470 ns
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Emitter Voltage (VCEO)3.8V
- Current - Collector Pulsed (Icm)60A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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