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IXGP36N60A3

  • In Stock: 10000
  • Available: 26745

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.70388US $3.70
10+US $3.33349US $33.33
30+US $2.59272US $77.78
100+US $2.12973US $212.97
500+US $2.03713US $1018.56
1000+US $1.85194US $1851.94

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  • Description
  • Alternatives
  • Shopping Guide
Description

The IXGP36N60A3 is a high-performance insulated gate bipolar transistor (IGBT) manufactured by IXYS Corporation, designed for various power electronics applications. This device is particularly suited for use in high-voltage and high-current environments, making it ideal for applications such as motor drives, induction heating, and power inverters.

Key Features:

  1. Voltage Rating: The IXGP36N60A3 has a maximum collector-emitter voltage (Vce) rating of 600 volts, allowing it to handle significant voltage levels in power applications.

  2. Current Rating: It can handle a continuous collector current (Ic) of up to 36 amperes, making it suitable for high-power applications.

  3. Switching Speed: The IGBT is designed for fast switching capabilities, which enhances efficiency and reduces switching losses in power conversion applications.

  4. Thermal Performance: The device features a low thermal resistance, which helps in effective heat dissipation. This is crucial for maintaining performance and reliability in high-power applications.

  5. Gate Drive Voltage: The IXGP36N60A3 operates with a gate-emitter voltage (Vge) typically in the range of ±20 volts, allowing for straightforward interfacing with standard gate drive circuits.

  6. Package Type: It is typically housed in a TO-247 package, which provides a robust and reliable physical structure for mounting and heat dissipation.

  7. Applications: This IGBT is commonly used in applications such as:

    • Motor control systems
    • Power inverters for renewable energy systems (like solar inverters)
    • Induction heating systems
    • UPS (Uninterruptible Power Supply) systems
    • Welding equipment

Electrical Characteristics:

  • Collector-Emitter Saturation Voltage (Vce(sat)): This parameter indicates the voltage drop across the IGBT when it is in the 'on' state, typically around 1.7 volts at a specified current level.
  • Turn-On and Turn-Off Times: The IXGP36N60A3 features fast turn-on and turn-off times, which are critical for high-frequency applications.

Reliability and Robustness:

The IXGP36N60A3 is designed to withstand harsh operating conditions, with built-in protection features against overcurrent and thermal overload. This enhances its reliability in demanding applications.

Conclusion:

Overall, the IXGP36N60A3 from IXYS is a versatile and robust IGBT that offers high efficiency, fast switching capabilities, and excellent thermal performance, making it a preferred choice for engineers and designers in the field of power electronics. Its combination of high voltage and current ratings, along with its reliability, positions it well for a wide range of industrial and commercial applications.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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