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IXGT28N60BD1
- Manufacturer's Part No.:IXGT28N60BD1
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- Series:-
- Description:IGBT 600V 40A 150W TO268
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- In Stock: 3922
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- Available: 3922
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part No.IXGT28N60BD1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Weight4.500005g
- PackagingTube
- Pin Count4
- Published2003
- Input TypeStandard
- Gate Charge68nC
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max150W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time40 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Package / CaseTO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Test Condition480V, 28A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn)
- Base Part NumberIXG*28N60
- Switching Energy2mJ (off)
- Fall Time-Max (tf)400ns
- Number of Elements1
- Td (on/off) @ 25°C15ns/175ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Max Collector Current40A
- Max Power Dissipation150W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time25 ns
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 28A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)800 ns
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5.5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)80A
- Collector Emitter Breakdown Voltage600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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