IXTA26P20P
- Manufacturer's Part No.:IXTA26P20P
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- Series:PolarP™
- Description:MOSFET P-CH 200V 26A TO-263
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- Available: 1793
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $7.20000 | US $7.20 |
10+ | US $6.48000 | US $64.80 |
30+ | US $5.04000 | US $151.20 |
100+ | US $4.14000 | US $414.00 |
500+ | US $3.96000 | US $1980.00 |
1000+ | US $3.60000 | US $3600.00 |
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- Description
- Alternatives
- Shopping Guide
The IXTA26P20P is a high-performance insulated gate bipolar transistor (IGBT) manufactured by IXYS Corporation, designed for various applications in power electronics. This device is particularly suited for use in motor drives, induction heating, and other high-power switching applications due to its ability to handle significant voltage and current levels.
Key Features:
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Voltage Rating: The IXTA26P20P has a maximum collector-emitter voltage (Vce) rating of 1200 volts, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous collector current (Ic) of up to 26 amperes, which allows it to manage substantial power loads effectively.
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Switching Speed: The IGBT is designed for fast switching capabilities, which enhances efficiency in power conversion applications. This feature is crucial for reducing switching losses and improving overall system performance.
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Thermal Performance: The IXTA26P20P has a low thermal resistance, which helps in maintaining lower junction temperatures during operation. This characteristic is essential for reliability and longevity in high-power applications.
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Gate Drive Voltage: The device operates with a gate-emitter voltage (Vge) typically around ±20 volts, which is standard for IGBT devices, allowing for compatibility with common gate drive circuits.
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Package Type: The IXTA26P20P is typically housed in a TO-220 package, which provides good thermal dissipation and ease of mounting on heatsinks. This package design is favored in power electronics for its robustness and reliability.
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Applications: This IGBT is widely used in various applications, including:
- Motor control systems
- Power inverters for renewable energy systems
- Welding equipment
- Induction heating systems
- UPS (Uninterruptible Power Supply) systems
Electrical Characteristics:
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Collector-Emitter Saturation Voltage (Vce(sat)): This parameter indicates the voltage drop across the IGBT when it is in the 'on' state, typically around 1.7 volts at rated current, which is relatively low, contributing to higher efficiency.
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Turn-On and Turn-Off Times: The IXTA26P20P features fast turn-on and turn-off times, which are critical for applications requiring rapid switching, such as inverters and converters.
Reliability and Safety:
The IXTA26P20P is designed with robust protection features, including built-in diodes for reverse recovery, which help to protect the device from voltage spikes and ensure safe operation in dynamic environments.
Conclusion:
Overall, the IXTA26P20P from IXYS is a versatile and reliable IGBT that meets the demands of modern power electronics applications. Its combination of high voltage and current ratings, fast switching capabilities, and efficient thermal management makes it an excellent choice for engineers looking to design efficient and reliable power systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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