K4Z80325BC-HC14

The K4Z80325BC-HC14 is a high-performance DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It is part of the company's extensive line of memory products, designed for various applications, including mobile devices, consumer electronics, and computing systems.

Key Features:

1. Type and Technology:

   • The K4Z80325BC-HC14 is a DDR3 (Double Data Rate 3) SDRAM, which means it can transfer data on both the rising and falling edges of the clock signal, effectively doubling the data rate compared to its predecessor, DDR2.

2. Capacity:

   • This specific chip has a capacity of 2 Gigabits (Gb), which translates to 256 Megabytes (MB) when organized in a standard configuration. This capacity is suitable for a variety of applications, particularly in mobile and embedded systems.

3. Speed:

   • The "HC14" in the part number indicates that this chip operates at a clock speed of 800 MHz, which corresponds to a data rate of 1600 MT/s (million transfers per second). This speed is typical for DDR3 memory, providing a good balance between performance and power consumption.

4. Package Type:

   • The K4Z80325BC-HC14 is typically packaged in a small form factor, often in a BGA (Ball Grid Array) configuration. This allows for efficient thermal management and space-saving on circuit boards, making it ideal for compact devices.

5. Voltage:

   • The chip operates at a low voltage of 1.5V, which is standard for DDR3 memory. This low voltage helps reduce power consumption, making it suitable for battery-powered devices.

6. Latency:

   • The memory has a CAS latency (Column Address Strobe latency) of 11, which indicates the number of clock cycles it takes to access a specific column of data in the memory array. This latency is typical for DDR3 memory and contributes to its overall performance.

7. Applications:

   • The K4Z80325BC-HC14 is commonly used in a variety of applications, including smartphones, tablets, laptops, and other consumer electronics. Its combination of speed, capacity, and low power consumption makes it a versatile choice for modern devices.

8. Manufacturing Process:

   • Samsung employs advanced manufacturing techniques to produce this DRAM chip, ensuring high reliability and performance. The chip is built using a 30nm process technology, which allows for higher density and lower power consumption.

Summary:

The K4Z80325BC-HC14 from Samsung is a DDR3 DRAM chip that offers a balance of performance, capacity, and power efficiency. With its 2Gb capacity, 800 MHz speed, and low voltage operation, it is well-suited for a range of applications in the mobile and consumer electronics markets. Its compact BGA packaging and advanced manufacturing processes further enhance its appeal for modern electronic designs.