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KLM4G1FETE-B041

  • Manufacturer's Part No.:
    KLM4G1FETE-B041
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  • Series:
    DDR3
  • Description:
    eMMC 5.1 4 GB 1.8, 3.3 V / 3.3 V HS400 11 x 10 x 0.8 mm -25 ~ 85 °C Mass Production
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  • In Stock: 6400
  • Available: 19000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.53200US $4.53
10+US $4.07880US $40.79
30+US $3.17240US $95.17
100+US $2.60590US $260.59
500+US $2.49260US $1246.30
1000+US $2.26600US $2266.00

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  • Description
  • Alternatives
  • Shopping Guide
Description

The KLM4G1FETE-B041 is a specific model of DRAM (Dynamic Random Access Memory) module produced by Samsung. This memory chip is typically used in various electronic devices, including smartphones, tablets, and other portable electronics, as well as in some computing applications.

Key Features and Specifications:

  1. Type: The KLM4G1FETE-B041 is a type of LPDDR3 (Low Power Double Data Rate 3) memory, which is designed for low power consumption while providing high performance. This makes it particularly suitable for mobile devices where battery life is a critical factor.

  2. Capacity: The module has a capacity of 4GB, which allows for efficient multitasking and smooth operation of applications, enhancing the overall user experience in devices that utilize this memory.

  3. Data Rate: The memory operates at a data rate of 1600 MT/s (megatransfers per second), which is typical for LPDDR3 memory. This high data rate enables faster data processing and improved performance in applications that require quick access to memory.

  4. Voltage: The KLM4G1FETE-B041 operates at a low voltage of 1.2V, which contributes to its energy efficiency. This low voltage is essential for extending battery life in portable devices.

  5. Package Type: The memory chip is typically packaged in a BGA (Ball Grid Array) format, which allows for a compact design and efficient thermal management. The BGA package also facilitates better electrical performance and reliability.

  6. Applications: This memory module is commonly used in smartphones, tablets, and other mobile devices, as well as in some embedded systems. Its low power consumption and high performance make it ideal for applications that require efficient memory usage.

  7. Manufacturing Process: Samsung employs advanced manufacturing techniques to produce this memory chip, ensuring high reliability and performance. The use of cutting-edge technology in its production contributes to the overall quality and longevity of the memory module.

  8. Compatibility: The KLM4G1FETE-B041 is designed to be compatible with a variety of mobile processors and chipsets, making it a versatile choice for manufacturers looking to integrate high-performance memory into their devices.

Summary:

In summary, the KLM4G1FETE-B041 from Samsung is a 4GB LPDDR3 memory module that offers a combination of high performance, low power consumption, and compact design. Its specifications make it an excellent choice for modern mobile devices, ensuring that users can enjoy smooth multitasking and efficient operation without compromising battery life.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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