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KSC1008COBU

  • Available: 708

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    KSC1008COBU
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • hFE Min
    40
  • Frequency
    50MHz
  • Lead Free
    Lead Free
  • Packaging
    Bulk
  • Part Status
    Obsolete
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Current Rating
    700mA
  • Number of Pins
    3
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Terminal Finish
    MATTE TIN
  • Transistor Type
    NPN
  • Base Part Number
    KSC1008
  • Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Voltage - Rated DC
    60V
  • Radiation Hardening
    No
  • Transition Frequency
    50MHz
  • Element Configuration
    Single
  • Max Collector Current
    700mA
  • Max Power Dissipation
    800mW
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    NPN
  • Gain Bandwidth Product
    50MHz
  • Number of Terminations
    3
  • Transistor Application
    SWITCHING
  • Emitter Base Voltage (VEBO)
    8V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 50mA, 500mA
  • Collector Emitter Voltage (VCEO)
    60V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Collector Emitter Breakdown Voltage
    60V
  • Collector Emitter Saturation Voltage
    200mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 50mA 2V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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