MBR130T1G
- Manufacturer's Part No.:MBR130T1G
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- Description:DIODE SCHOTTKY 30V 1A SOD123
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- In Stock: 21000
- Available: 1065891
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.09792 | US $0.10 |
10+ | US $0.06528 | US $0.65 |
30+ | US $0.04896 | US $1.47 |
100+ | US $0.03917 | US $3.92 |
500+ | US $0.03590 | US $17.95 |
1000+ | US $0.03264 | US $32.64 |
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The MBR130T1G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. It is designed for high-efficiency applications, particularly in power management and switching power supplies. Here’s a detailed description of its key features and specifications:
General Characteristics:
- Type: Schottky Barrier Rectifier
- Package: Typically available in a surface-mount package, specifically the SMC (DO-214AB) package, which is compact and suitable for automated assembly processes.
- Polarity: The diode is a single, standard polarity device, meaning it allows current to flow in one direction while blocking it in the reverse direction.
Electrical Specifications:
- Maximum Reverse Voltage (VR): The MBR130T1G has a maximum reverse voltage rating of 30 volts, making it suitable for low to moderate voltage applications.
- Forward Current (IF): It can handle a continuous forward current of up to 1 ampere, which is adequate for many consumer and industrial applications.
- Forward Voltage Drop (VF): One of the key advantages of Schottky diodes is their low forward voltage drop. The MBR130T1G typically has a forward voltage drop of around 0.45 volts at a forward current of 1 ampere, which contributes to its efficiency and reduced power loss.
- Reverse Recovery Time (trr): Schottky diodes are known for their fast switching capabilities. The MBR130T1G features a very low reverse recovery time, which minimizes switching losses in high-frequency applications.
Thermal Characteristics:
- Operating Temperature Range: The diode can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
- Junction-to-Case Thermal Resistance (RθJC): This parameter indicates how well the diode can dissipate heat. The MBR130T1G has a thermal resistance that allows for effective heat management in applications where power dissipation is a concern.
Applications:
The MBR130T1G is commonly used in:
- Power supply circuits
- DC-DC converters
- Rectification in power management systems
- Freewheeling diodes in inductive loads
- Solar panel applications
Key Benefits:
- High Efficiency: The low forward voltage drop and fast switching characteristics contribute to overall system efficiency.
- Compact Size: The surface-mount package allows for space-saving designs in modern electronics.
- Reliability: ON Semiconductor is known for producing high-quality components, and the MBR130T1G is no exception, offering reliable performance in demanding applications.
In summary, the MBR130T1G from ON Semiconductor is a versatile Schottky diode that combines low forward voltage drop, fast switching speed, and robust thermal performance, making it an excellent choice for a variety of electronic applications.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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