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MBR2H100SFT3G
- Manufacturer's Part No.:MBR2H100SFT3G
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- Description:DIODE SCHOTTKY 100V 2A SOD123FL
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- Quantity:Buy NowAdd to Cart
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- In Stock: 30000
- Available: 859966
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.31878 | US $0.32 |
10+ | US $0.21252 | US $2.13 |
30+ | US $0.15939 | US $4.78 |
100+ | US $0.12751 | US $12.75 |
500+ | US $0.11689 | US $58.45 |
1000+ | US $0.10626 | US $106.26 |
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- Description
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- Shopping Guide
The MBR2H100SFT3G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for high-efficiency applications, particularly in power management and rectification circuits. Here’s a detailed description of its features and specifications:
Key Features:
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Type: Schottky Diode
- The MBR2H100SFT3G utilizes a Schottky barrier technology, which allows for lower forward voltage drop and faster switching speeds compared to standard diodes.
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Voltage Rating:
- The diode has a maximum reverse voltage (V_R) rating of 100 volts, making it suitable for a variety of applications where moderate voltage handling is required.
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Current Rating:
- It can handle a continuous forward current (I_F) of up to 2 amperes, which is ideal for low to medium power applications.
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Forward Voltage Drop:
- The typical forward voltage drop (V_F) is around 0.45 volts at a forward current of 2A, which contributes to its efficiency by minimizing power loss during operation.
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Package Type:
- The MBR2H100SFT3G is available in a surface-mount package (SMD), specifically in the SMC (DO-214AB) package format. This makes it suitable for automated assembly processes and helps save space on printed circuit boards (PCBs).
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Thermal Characteristics:
- The diode has a maximum junction temperature (T_J) rating of 150°C, allowing it to operate in a wide range of thermal environments. It also features a thermal resistance that helps manage heat dissipation during operation.
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Reverse Recovery Time:
- Being a Schottky diode, it has negligible reverse recovery time, which makes it ideal for high-frequency applications, such as switch-mode power supplies and DC-DC converters.
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Applications:
- The MBR2H100SFT3G is commonly used in power supply circuits, battery charging systems, and as a freewheeling diode in inductive loads. Its low forward voltage drop and fast switching capabilities make it particularly useful in applications where efficiency is critical.
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Compliance and Reliability:
- The diode is compliant with RoHS standards, ensuring that it is free from hazardous substances and suitable for environmentally conscious designs.
Summary:
The MBR2H100SFT3G from ON Semiconductor is a versatile Schottky diode that combines high efficiency, low forward voltage drop, and fast switching capabilities, making it an excellent choice for various power management applications. Its robust specifications and surface-mount design facilitate easy integration into modern electronic circuits, catering to the needs of both consumer and industrial applications.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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