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MBRS3100T3G

  • In Stock: 4000
  • Available: 372416

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.15992US $1.16
10+US $0.77328US $7.73
30+US $0.57996US $17.40
100+US $0.46397US $46.40
500+US $0.42530US $212.65
1000+US $0.38664US $386.64

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Description

The MBRS3100T3G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for high-efficiency applications, particularly in power management and rectification circuits.

Key Features:

  1. Type: Schottky Diode

    • The MBRS3100T3G utilizes a Schottky design, which allows for low forward voltage drop and fast switching speeds, making it ideal for applications where efficiency is critical.
  2. Voltage Rating:

    • The diode has a maximum reverse voltage (V_R) rating of 30 volts, which makes it suitable for various low to medium voltage applications.
  3. Current Rating:

    • It can handle a forward current (I_F) of up to 3 amperes, providing sufficient current capacity for many power supply designs.
  4. Forward Voltage Drop:

    • The typical forward voltage drop is around 0.45 volts at a forward current of 3A, which contributes to its efficiency by minimizing power loss during operation.
  5. Package Type:

    • The MBRS3100T3G is available in a surface-mount package (SMD), specifically the DO-214AC (SMB) package. This compact form factor is advantageous for space-constrained applications and allows for easy integration into printed circuit boards (PCBs).
  6. Temperature Range:

    • The diode operates effectively over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
  7. Applications:

    • Common applications include power supplies, DC-DC converters, and battery charging circuits. Its fast switching capability also makes it suitable for high-frequency applications.
  8. Reliability:

    • The MBRS3100T3G is designed with reliability in mind, featuring a robust construction that ensures long-term performance in demanding applications.

Electrical Characteristics:

  • Reverse Recovery Time: The Schottky design inherently provides a very low reverse recovery time, which is beneficial in high-speed switching applications.
  • Capacitance: The diode exhibits low junction capacitance, which helps in reducing switching losses.

Conclusion:

The MBRS3100T3G from ON Semiconductor is a versatile and efficient Schottky diode that is well-suited for a variety of electronic applications. Its combination of low forward voltage drop, high current capacity, and compact packaging makes it an excellent choice for designers looking to enhance the performance and efficiency of their circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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