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MBRS4201T3G

  • In Stock: 36157
  • Available: 235078

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.76484US $1.76
10+US $1.17656US $11.77
30+US $0.88242US $26.47
100+US $0.70594US $70.59
500+US $0.64711US $323.56
1000+US $0.58828US $588.28

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The MBRS4201T3G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for high-efficiency applications, particularly in power management and switching circuits.

Key Features:

  1. Type: Schottky Diode

    • The MBRS4201T3G utilizes a Schottky design, which allows for low forward voltage drop and fast switching speeds, making it ideal for applications where efficiency is critical.
  2. Voltage Rating:

    • The diode has a maximum reverse voltage (V_R) rating of 40 volts, which makes it suitable for various low to moderate voltage applications.
  3. Current Rating:

    • It can handle a continuous forward current (I_F) of up to 2 amperes, allowing it to be used in power supply circuits and other applications where moderate current handling is required.
  4. Forward Voltage Drop:

    • The typical forward voltage drop is around 0.45 volts at 2A, which contributes to its efficiency by minimizing power loss during operation.
  5. Package Type:

    • The MBRS4201T3G is available in a surface-mount package (SOD-123), which is compact and suitable for automated assembly processes. This package type helps save space on printed circuit boards (PCBs).
  6. Temperature Range:

    • The diode operates effectively over a wide temperature range, typically from -55°C to +150°C, making it versatile for various environmental conditions.
  7. Fast Recovery Time:

    • The Schottky design allows for rapid switching, which is beneficial in high-frequency applications, reducing the risk of switching losses.
  8. Applications:

    • Common applications include power supplies, DC-DC converters, and reverse polarity protection circuits. Its low forward voltage drop and fast recovery time make it particularly useful in battery-operated devices and energy-efficient systems.

Electrical Characteristics:

  • Reverse Leakage Current (I_R): The reverse leakage current is low, typically in the range of microamperes at rated voltage, which helps in maintaining efficiency in power applications.
  • Capacitance: The diode exhibits low junction capacitance, which is advantageous in high-speed switching applications.

Conclusion:

The MBRS4201T3G from ON Semiconductor is a reliable and efficient Schottky diode that is well-suited for a variety of electronic applications. Its combination of low forward voltage drop, high current handling capability, and fast switching performance makes it an excellent choice for designers looking to enhance the efficiency and performance of their circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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