MCH6602-TL-E
- Manufacturer's Part No.:MCH6602-TL-E
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 30V 0.35A MCPH6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 8535
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.37572 | US $0.38 |
10+ | US $0.25048 | US $2.50 |
30+ | US $0.18786 | US $5.64 |
100+ | US $0.15029 | US $15.03 |
500+ | US $0.13776 | US $68.88 |
1000+ | US $0.12524 | US $125.24 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.MCH6602-TL-E
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.6mm
- Height850μm
- Length2mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2007
- Rise Time65ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins6
- Package / Case6-SMD, Flat Leads
- Fall Time (Typ)120 ns
- Terminal FinishTin/Bismuth (Sn/Bi)
- Lifecycle StatusLIFETIME (Last Updated: 11 hours ago)
- Power Dissipation800mW
- Number of Elements2
- Turn On Delay Time19 ns
- Radiation HardeningNo
- Turn-Off Delay Time155 ns
- Element ConfigurationDual
- Max Power Dissipation800mW
- Operating Temperature-55°C~150°C TJ
- Rds On (Max) @ Id, Vgs3.7 Ω @ 80mA, 4V
- Gate Charge (Qg) (Max) @ Vgs1.58nC @ 10V
- Gate to Source Voltage (Vgs)10V
- Continuous Drain Current (ID)350mA
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds7pF @ 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee6
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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